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| T1P3003028-SP 30 W, 28V, 500 MHz--2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across the entire band when operated in the TriQuint wide-band test fixture. The T1P3003028-SP can also be used in narrow band applications and is rated at 40Watts P1dB at 2GHz. Figure 1. Available Packages -- Narrow Band up to 2GHz -- 12dB gain -- 58% efficiency -- 40Watt P1dB Table 1. Maximum Ratings Sym V+ Vl+ PD TCH Parameter Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Power Dissipation Operating Channel Temperature Value 28 V -5V to 0V 5.6A 70 mA See note 3 150 C o Notes 2/ 2/ 2/ 3/ 4/ | lG | Gate Supply Current 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 5.6 (C/W) 4/ Junction operating temperature will directly affect the device median time to failure(TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Table 2. Thermal Information Parameter Test Conditions TCH (C) 145 JC (C/W) 5.6 TM (HRS) 1.6E+6 Features -- Pulse Characterization -- Exceptional Instantaneous band-width performance from 500MHz - 2GHz -- Increased efficiency results in significant advantages -- Smaller and lighter systems -- Reduced system component costs -- Reduced energy consumption -- Typical Performance ratings -- Wide-Band 500MHz-2GHz (as tested in TriQuint Wideband Fixture) -- 10dB gain -- 50% Efficiency -- 30Watt P1dB JC Thermal Resis- Vd = 10 V tance (channel to Idq = 900 mA backside of carrier) Pdiss = 9 W Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P3003028-SP 30 W, 28V, 500 MHz--2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TA = 25 C. Table 3. dc Characteristics Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Table 4. RF Characteristics Parameter Gain @ P1dB, 500MHz-2GHz (VDS = 28 V, POUT = 30 W, IDD = 400 mA) P1dB, 500MHz-2GHz (VDS = 28 V, POUT = 30 W, IDD = 400 mA) Power Added Efficiency, 500MHz-2GHz (VDS = 28 V, POUT = 30 W, IDD = 400 mA) Gain (VDS = 28 V, POUT = 40 W, IDQ = 400 mA) Output Power (VDS = 28 V, 1 dB compression, IDQ = 400 mA) Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 400 mA) Ruggedness (VDS = 28 V, POUT = 40 W, IDQ = 400 mA, f = 500 MHz, VSWR = 3:1, all angles) Symbol G P1dB -- Min -- -- -- Typ 10 30 45 Max -- -- -- Unit dB W % Functional Tests, Instantaneous Band-Width 100uS, 10% (Tested in TriQuint's Wide-Band Test Fixture) Symbol Idss Gm VP VBGS VBGD Min -- -- -1.5 -40 -45 Typ 4000 3300 -1 -- -- Max -- -- -0.6 -30 -35 Unit mA mS V V V Functional Tests, Narrow Band RF Performance 100uS, 10% (2GHz) G P1dB -- -- -- -- -- 12 40 55 -- -- -- dB W % No degradation in output power. Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P3003028-SP 30 W, 28V, 500 MHz--2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Figure 2. P1dB & Efficiency (Narrow Band Performance Plotted over Frequency) Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P3003028-SP 30 W, 28V, 500 MHz--2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Figure 3. P1dB & Gain (Narrow Band Performance Plotted over Frequency) Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P3003028-SP 30 W, 28V, 500 MHz--2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Figure 4. Plot of impedances to be presented to the Source & Load of the device for optimal RF performance Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P3003028-SP 30 W, 28V, 500 MHz--2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Table 5. Table of RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or Load-pull system. The data is representative of typical device performance for both 100uSecond pulse width, 10% duty cycle conditions and 1000uSecond pulse width, 10% duty cycle conditions. frequency gamma- gammain (real) in (imag) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 -0.948 -0.953 -0.956 -0.958 -0.959 -0.960 -0.961 -0.961 -0.961 -0.962 -0.962 -0.962 -0.962 -0.962 -0.962 -0.962 -0.962 -0.961 -0.961 -0.961 -0.961 0.162 0.130 0.106 0.087 0.072 0.059 0.048 0.038 0.029 0.021 0.014 0.007 0.001 -0.005 -0.011 -0.016 -0.022 -0.027 -0.031 -0.036 -0.041 Z-in (real) 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 Z-in (imag) 4.24 3.39 2.76 2.26 1.86 1.53 1.24 0.98 0.75 0.55 0.36 0.18 0.02 -0.14 -0.28 -0.42 -0.56 -0.69 -0.81 -0.93 -1.05 gammaout (real) -0.713 -0.716 -0.719 -0.723 -0.728 -0.733 -0.738 -0.743 -0.749 -0.755 -0.761 -0.767 -0.774 -0.780 -0.786 -0.792 -0.799 -0.805 -0.811 -0.817 -0.823 gamma- Z-out Z-out out (imag) (real) (real) 0.033 0.040 0.045 0.051 0.056 0.061 0.065 0.069 0.072 0.075 0.078 0.080 0.081 0.083 0.083 0.084 0.084 0.083 0.083 0.082 0.080 8.37 8.26 8.12 7.98 7.81 7.64 7.46 7.27 7.08 6.88 6.68 6.47 6.27 6.07 5.87 5.67 5.48 5.29 5.10 4.93 4.75 1.14 1.34 1.53 1.71 1.87 2.01 2.14 2.26 2.35 2.43 2.50 2.54 2.58 2.60 2.60 2.60 2.58 2.55 2.52 2.47 2.42 Gain 21.75 20.42 19.30 18.32 17.46 16.69 16.00 15.36 14.78 14.24 13.73 13.26 12.82 12.40 12.01 11.64 11.28 10.94 10.62 10.31 10.01 P1db [W] 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 P1db [dBm] 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 46.2 PAE [%] 68 67 67 66 65 65 64 63 63 62 62 61 60 60 59 58 58 57 56 56 55 Note: Data sheet will be updated with TriQuint wide-band test fixture characterization data in the near future. Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P3003028-SP 30 W, 28V, 500 MHz--2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Package Dimensions Note: All dimensions in inches. Scale 8:1 .320 .090 .087 .350 45 X .085 .063 .006 2 .351 .090 4 .040 1 .360 Preliminary Data Sheet Subject to Change www.triquint.com/powerband |
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